NTLJF3117P
Power MOSFET and
Schottky Diode
-20 V, -4.1 A, P-Channel, with 2.0 A
Schottky Barrier Diode, 2x2 mm,
m Cool ] Package
http://onsemi.com
Features
? FETKY t Configuration with MOSFET plus Low Vf Schottky Diode
? m COOL t Package Provides Exposed Drain Pad for Excellent
V (BR)DSS
MOSFET
R DS(on) MAX
I D MAX (Note 1)
?
?
?
?
?
Thermal Conduction
2x2 mm Footprint Same as SC-88 Package Design
Independent Pinout Provides Circuit Design Flexibility
Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
High Current Schottky Diode: 2 A Current Rating
This is a Pb-Free Device
-20 V
V R MAX
100 m W @ -4.5 V
135 m W @ -2.5 V
200 m W @ -1.8 V
SCHOTTKY DIODE
V F TYP
-4.1 A
I F MAX
Applications
? Optimized for Portable Applications like Cell Phones, Digital
Cameras, Media Players, etc.
? DC-DC Buck Circuit
? Li-Ion Battery Applications
? Color Display and Camera Flash Regulators
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
30 V
D
0.47 V
A
2.0 A
Parameter
Drain-to-Source Voltage
Symbol
V DSS
Value
-20
Unit
V
S
P-CHANNEL MOSFET
K
SCHOTTKY DIODE
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
V GS
I D
± 8.0
-3.3
-2.4
V
A
MARKING
DIAGRAM
G
Power Dissipation
(Note 1)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
P D
-4.1
1.5
W
1
WDFN6
CASE 506AN
1 6
2 JHM G 5
3 4
t ≤ 5s
2.3
JH = Specific Device Code
Continuous Drain
Current (Note 2)
Steady
T A = 25 ° C
T A = 85 ° C
I D
-2.3
-1.6
A
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
Power Dissipation
(Note 2)
Pulsed Drain Current
State
T A = 25 ° C
t p = 10 m s
P D
I DM
0.71
-20
W
A
PIN CONNECTIONS
Operating Junction and Storage Temperature
T J , T STG
-55 to
150
° C
A
1
K
6
K
Source Current (Body Diode) (Note 2)
I S
-1.9
A
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
N/C
D
2
3
D
5
4
G
S
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm 2 , 2 oz Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
July, 2006 - Rev. 2
1
Publication Order Number:
NTLJF3117P/D
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相关代理商/技术参数
NTLJF3118N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices
NTLJF3118NTAG 功能描述:MOSFET NFET 2X2 20V 3.8A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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